Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

81A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

63W Tc

Turn Off Delay Time  

12 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.35V @ 25μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2007

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

63W

Case Connection  

DRAIN

Turn On Delay Time  

9.7 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5.7m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1470pF @ 13V

Gate Charge (Qg) (Max) @ Vgs  

15nC @ 4.5V

Rise Time  

46ns

Vgs (Max)  

±20V

Fall Time (Typ)  

8.5 ns

Continuous Drain Current (ID)  

81A

JEDEC-95 Code  

TO-252AA

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0057Ohm

Drain to Source Breakdown Voltage  

25V

Avalanche Energy Rating (Eas)  

86 mJ

Height  

2.3876mm

Length  

6.7056mm

Width  

6.22mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant